base 1 collector 2 3 emitter features: * medium power linear switching applications maximum ratings (t a =25 unless otherwise noted) symbol parameter units v cbo collector-base voltage v v ceo collector-emitter voltage v v ebo emitter-base voltage v i c collector current -continuous p c collector power dissipation t j junction temperature 150 t stg storage temperature -55-150 TIP41 TIP41a TIP41b TIP41c 40 60 80 100 40 60 80 100 5 6 2 a w to-220c 1. base 2. collector 3. emitter 1 2 3 * complement to tip42/tip42a/tip42b/tip42c 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ dimensions in millimeters package dimension ? TIP41/41a/41b/41c pb free plating product TIP41/TIP41a/TIP41b/TIP41c npn silicon epitaxial power transistor pb ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2
electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c =1ma, i e =0 collector-emitter breakdown voltage v (br)ceo i c =30ma, i b =0 emitter-base breakdown voltage v (br)ebo i e = 1ma, i c =0 collector cut-off current i cbo v cb =40v, i e =0 emitter cut-off current i ebo v eb =5v, i c =0 dc current gain h fe(1) v ce =4v, i c =0.3a collector-emitter saturation voltage v ce (sat) i c =6a, i b =0.6a base-emitter voltage v be(on) transition frequency f t v ce =10v, i c =0.5a mhz f = 1mhz 3 v ce =4v, i c =6a 2 v 1.5 v h fe(2) v ce =4v, i c =3a 15 75 30 1 ma i ceo TIP41/41a TIP41b/41c v ce =30v, i v ce =60v, i b =0 b =0 0.7 ma collector cut-off current TIP41 TIP41a TIP41b TIP41c v cb =60v, i e =0 v cb =80v, i e =0 v cb =100v, i e =0 0.4 ma 5 v TIP41 TIP41a TIP41b TIP41c 40 60 80 100 v TIP41 TIP41a TIP41b TIP41c 40 60 80 100 v ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 ? TIP41/41a/41b/41c
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